h i g h r e l i a b i l i t y n p n s i l i c o n p h o t o t r a n s i s t o r op803, op804, op805 (tx, txv) ? tt electronics plc issue b 08/2016 page 1 optek technology, inc. 1645 wallace drive, carrollton, tx 75006|ph: +1 972 323 2200 www.optekinc.com | www.ttelectronics.com general note tt electronics reserves the right to make changes in product speci?cation without notice or liability. all information is subject to tt electronics own data and is considered accurate at time of going to print. d e s c r i p t i o n : each device in this series consists of a high reliability npn silicon phototransistor mounted in a herme ? cally sealed to r 18 package, which o + ers high power dissipa ? on and superior hos ? le environment opera ? on. device lensing creates a 12 angle when measured from the op ? cal axis to the half power point. these devices can be matched with a solid state infrared source (such as the high resolu ? on op235 and op236 series of ireds), or can be used to sense infrared content in a visible light source (such as a tungsten bulb or sunlight) for automa ? c brightness control. tx and txv devices are processed to mil r prf r 19500. please refer to applica ? on bulle ? ns 208 and 210 for addi ? onal design informa ? on and reliability (degrada ? on) data. a p p l i c a t i o n s : x space-limited applications x hostile environment applications f e a t u r e s : x to-18 hermetically sealed package x lensed for high sensitivity x narrow acceptance angle x processed after mil-prf-19500 x mechanically and spectrally matched to high reliability ireds in the op235 and op236 series part number sensor light current i c(on) (ma) min / max v ce typ/max input power e e (mw/cm 2 ) viewing angle lead length OP803TX transistor 4.00 / 8.00 5 5.0 25 0.50" OP803TXv op804tx 7.00 / 22.00 op804txv op805tx 15.00 / na op805txv
? tt electronics plc general note tt electronics reserves the right to make changes in product speci?cation without notice or liability. all information is subject to tt electronics own data and is considered accurate at time of going to print. h i g h r e l i a b i l i t y n p n s i l i c o n p h o t o t r a n s i s t o r p p p sse page p echnology nc allace rie arrollton ph oteincco ttelectronicsco absolute maximum ra ? ngs (t a =25c unless otherwise noted) storage temperature range r 65 c to +150 c opera ? ng temperature range r 55 c to +125 c collector r emi ? er voltage 30 v emi ? er r collector voltage (applies to all op800 and op830 devices) 5 v lead soldering temperature [ 1/16 inch (1.6mm) fro case for 5 seconds with soldering iron] (1) 260 c power dissipa ? on (2) 250 mw collector r base voltage 30 v emi ? er r base voltage 5 v electrical characteris ? cs (t a = 25c unless otherwise noted) input diode symbol parameter min typ max units test conditions i c (on) on r state collector current op803 (tx, txv) op804 (tx, txv op805 (tx, txv) 4.0 7.0 15.0 r 8 22 ma v ce = 5.0v, e e = 20 mw/cm 2(3) i ceo collector r emi ? er dark current 100 na v ce = 10.0 v, e e = 0 100 a v ce = 30.0 v, e e = 0 t a = 100 c v (br)ceo collector r base breakdown voltage 30 v i c = 100 a, i b = 0, e e = 0 v (br)eco emi ? er r collector breakdown voltage 7.0 v i c = 100 a, e e = 0 v ce(sat) collector r emi ? er satura ? on voltage 0.40 v i c = 0.4 ma, e e = 20 mw/cm (2)(3) t f rise time op804 (tx, txv) op805 (tx, txv) 10.0 15.0 v cc = 30 v, i c = 1.00 ma, rl = 100 o t r fall time op804 (tx, txv) op8045 (tx, txv) 10.0 15.0 s notes: (1) rma g ux is recommended. dura ? on can be extended to 10 seconds maximum when g ow soldering. (2) derate linearly 2.5 mw/ c above 25 c. (3) light source is an un . ltered rungsten lamp operated at a temperature of 2870 k
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